Semiconductor laser
文献类型：专利
| 作者 | OSHIMA HIROYUKI; IWANO HIDEAKI; KOMATSU HIROSHI; TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1986-07-07 |
| 专利号 | JP1986148892A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To implement a double heterostructure Si semiconductor laser, which is constituted on an Si substrate, by alternately laminating two kinds of SiGe thin films having different composition rations, providing an active layer having a super lattice structure, and providing double-layer clad layers, whose main component is Si. CONSTITUTION:On a single crystal Si substrate 101, a first clad layer, an active layer and a second clad layer are provided. The first clad layer is, e.g., N-type Si 102 and can include slight Ge. The second clad layer is P-type Si 105 and can include slight Ge. The active layer, which performs laser oscillation, has a super lattice structure, in which Si1-xGex (0<=x<=1) thin film 104 and Si1-yGey (0<=y<=1, xnot equal to y) thin film 103 are alternately laminated. In the active layer consti tuted in this way, probability in direct transition is strikingly increased and emission of laser light becomes possible even if the constituent materials are indirect transition type Si and Ge. Thus the excellent semiconductor laser can be implemented stably at a low cost. |
| 公开日期 | 1986-07-07 |
| 申请日期 | 1984-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89574]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI,IWANO HIDEAKI,KOMATSU HIROSHI,et al. Semiconductor laser. JP1986148892A. 1986-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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