Manufacture of optical semiconductor device
文献类型：专利
| 作者 | YAMAZAKI SUSUMU; OKAZAKI JIRO |
| 发表日期 | 1991-08-06 |
| 专利号 | JP1991180086A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor device |
| 英文摘要 | PURPOSE:To eliminate defects such as recesses and cavities in a burying layer when an inverted mesa is buried in the burying layer formed by a vapor growth method by a method wherein the burying layer is composed of a semiconductor mixed crystal layer which has lattice matching with an InP substrate and contains As. CONSTITUTION:An n-type InP substrate is used as a substrate 1 and a guide layer 2, an active layer 3, a cladding layer 4 and a contact layer 5 are built up on the substrate The respective layers 2-5 have lattice matching with the n-type InP substrate An SiO2 layer 6 is formed on the contact layer 5 and a mesa-etching is performed by using the layer 6 as a mask to form an inverted mesa. Then an Al0.5In0.5As layer which has lattice matching with the n-type InP substrate 1 is built up around the inverted mesa and on the guide layer 2 to form a burying layer 7. The burying layer 7 obtained as described above has no contractional defects such as recesses and cavities and has a high resistivity not lower than 10OMEGA-cm. |
| 公开日期 | 1991-08-06 |
| 申请日期 | 1989-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89579]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU,OKAZAKI JIRO. Manufacture of optical semiconductor device. JP1991180086A. 1991-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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