Semiconductor light emitting device
文献类型：专利
| 作者 | YANO, MITSUHIRO; NISHI, HIROSHI; TAKUSAGAWA, MASAHITO; NISHITANI, YORIMITSU |
| 发表日期 | 1982-05-11 |
| 专利号 | US4329660 |
| 著作权人 | FIJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | In a semiconductor light emitting device, a buried layer of a semiconductor is selectively formed in at least one of a first and a second clad layers in order to determine a light emitting region by the configuration of the buried layer of the semiconductor. The buried layer of the semiconductor has a conductivity type which is opposite to the conductivity type of the surrounding clad layer and an index of refraction which is different from the index of refraction of the surrounding clad layer. |
| 公开日期 | 1982-05-11 |
| 申请日期 | 1980-02-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89580]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FIJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | YANO, MITSUHIRO,NISHI, HIROSHI,TAKUSAGAWA, MASAHITO,et al. Semiconductor light emitting device. US4329660. 1982-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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