Optical semiconductor device
文献类型：专利
| 作者 | KOBAYASHI, FUMIHIKO; MIYAZAWA, TAKEO; MORI, HIDEFUMI; NAKANO, JUN-ICHI |
| 发表日期 | 1998-07-21 |
| 专利号 | US5783844 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher. |
| 公开日期 | 1998-07-21 |
| 申请日期 | 1995-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, FUMIHIKO,MIYAZAWA, TAKEO,MORI, HIDEFUMI,et al. Optical semiconductor device. US5783844. 1998-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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