Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | FUKUDA, CHIE; KATO, TAKASHI |
| 发表日期 | 2014-02-11 |
| 专利号 | US8649410 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A semiconductor laser according to the present invention includes a first reflective region and a second reflective region disposed opposite to the first reflective region in a predetermined direction of an optical axis. The first reflective region has a plurality of gain waveguides each including an active layer and a plurality of refractive-index controlling waveguides each having a first diffraction grating formed therein. The gain waveguides and the refractive-index controlling waveguides are alternately arranged at a predetermined pitch in the direction of the optical axis. The second reflective region has a second diffraction grating. |
| 公开日期 | 2014-02-11 |
| 申请日期 | 2010-05-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | FUKUDA, CHIE,KATO, TAKASHI. Semiconductor laser and method for manufacturing the same. US8649410. 2014-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。