Semiconductor laser device
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-10-19 |
| 专利号 | JP1989262687A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve such characteristics as a threshold current and an external differential quantum efficiency by a method wherein a buried layer which buries a mesa type active region is formed of a high-resistance semiconductor layer. CONSTITUTION:As the whole surface, which is located on both ends of a mesa, of an n-type substrate 17 is covered with a high-resistance semiconductor layer (Fe-doped InP layer) 13, a sufficient resistivity is obtained. Moreover, a p-type impurity forming region 10 is provided in the vicinity of a part, which comes into contact to an electrode 11, of an N-type low-resistance region on the sidewall of the mesa. As this region 10 exists, a p-n junction is formed between the region 10 and the low-resistance region on a path from the electrode 11 to lead to the substrate 17 via the N-type low-resistance region. Accordingly, in order to make a leakage current flow through the path from the electrode 11 to lead to the substrate 17 via the low-resistance region, a voltage higher than the diffusion potential of the p-n junction must be applied. As the diffusion potential in an active layer 16 is lower than that in the InP layer 13, a current first flows to the side of the layer 16 if a voltage is applied to a semiconductor laser. When the laser is oscillated, the current keeps flowing. |
| 公开日期 | 1989-10-19 |
| 申请日期 | 1988-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. Semiconductor laser device. JP1989262687A. 1989-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。