Manufacture of semiconductor laser
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1990-10-01 |
| 专利号 | JP1990246180A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To suppress a mass transport phenomenon and to avoid that unpreferable n-InP is formed on side faces of an InP upper-side clad layer by a method wherein, when a mesa-type structure body is formed, a composition ratio of Ga or As in an InGaAsP cap layer is set to a composition ratio or lower of Ga or As in an InGaAsP active layer in such a way that the upper-end part of the InP upper-side clad layer has an angle of 90 deg. or higher. CONSTITUTION:When an angle theta at the upper-end part of an InP upper-side clad layer 24 is set to 90 deg. or higher at a mesa etching operation, it is possible to sharply suppress a reduction in a mass transport which has been caused immediately before a liquid epitaxial growth operation for a filling operation, and n-InP is hardly formed on side faces of the clad layer. The angle theta at the upper-end part can be set to 90 deg. or higher when an etch rate of InGaAsP layer situated at the upper part and the lower part of the clad layer 24 is controlled; it is enough to set an etch rate of an InGaAsP cap layer 25 at the upper part is made faster than or equal to an etch rate of an InGaAsP active layer 23 at the lower part. |
| 公开日期 | 1990-10-01 |
| 申请日期 | 1989-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Manufacture of semiconductor laser. JP1990246180A. 1990-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。