Single wavelength laser and its manufacture
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI |
| 发表日期 | 1990-08-30 |
| 专利号 | JP1990218190A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single wavelength laser and its manufacture |
| 英文摘要 | PURPOSE:To make possible the low-threshold operation and high-efficiency operation of the title device by a method wherein a semiconductor layer formed with a periodical structure and a periodical channel for injecting a current are formed on an active layer. CONSTITUTION:A semiconductor layer 25 having periodical grooves is provided on an active layer 3 and a channel 30 for injecting a current is periodically formed by diffusing an impurity from a clad layer 26. Accordingly, a current into the layer 3 is injected periodically and unevenly, the periodical distribution of carriers is formed in the layer 3, a laser is formed into a gain coupling distributed feedback laser and a periodic fluctuation in a gain coefficient is formed by taking the distribution of the injected carriers. Therefore, an absorption loss of a laser beam in a waveguide is reduced. Thereby, the low-threshold operation and high-efficiency operation of the laser becomes possible. |
| 公开日期 | 1990-08-30 |
| 申请日期 | 1989-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89611]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI. Single wavelength laser and its manufacture. JP1990218190A. 1990-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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