Manufacture of semiconductor laser
文献类型：专利
| 作者 | KIMURA HIDE; KONO MASAKI |
| 发表日期 | 1990-09-13 |
| 专利号 | JP1990231782A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the reliability and mass productivity by burying a second clad layer, composed of AlGaAs and difficult to bury by liquid growth, and a first cap layer on the second clad layer through a decompression MOCVD method using an insulating film on the first cap layer as a mash. CONSTITUTION:Sections from an Si3N4 film 18 to one part of an N-AlGaAs second clad layer 16 are removed with the exception of a region on a striped groove 13 shaped onto a P substrate 1 A P-AlGaAs second current block layer 19 is grown up to the side face of at least an N-GaAs first cap layer 17 through a decompression MOCVD method while using the Si3N4 film 15 left on the stripe groove 13 as a mask. An N-GaAs second cap layer 20 is grown similarly onto the P-AlGaAs second current block layer 19 through the decompression MOCVD method at the same time. The Si3N4 film 18 is removed, and both P and N electrodes are formed. Accordingly, defective growth on the interface buried is hardly generated, thus easily mass-producing a semiconductor laser having high reliability. |
| 公开日期 | 1990-09-13 |
| 申请日期 | 1989-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89612]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA HIDE,KONO MASAKI. Manufacture of semiconductor laser. JP1990231782A. 1990-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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