Monolithically integrated ridge waveguide semiconductor optical preamplifier
文献类型:专利
作者 | RIDEOUT WILLIAM C; HOLMSTROM ROGER P; EICHEN ELLIOT; POWAZINIK WILLIAM; LA COURSE JOANNE; SCHLAFER JOHN; LAUER ROBERT B |
发表日期 | 1992-01-25 |
专利号 | CA2046742A1 |
著作权人 | GTE LABORATORIES INCORPORATED |
国家 | 加拿大 |
文献子类 | 发明申请 |
其他题名 | Monolithically integrated ridge waveguide semiconductor optical preamplifier |
英文摘要 | 90-3-820 MONOLITHICALLY INTEGRATED RIDGE WAVEGUIDE SEMICONDUCTOR OPTICAL PREAMPLIFIER Abstract A monolithically integrated optical preamplifier com-prises an amplifying region, an optical detection regionfor detecting amplified light, and an opticallytransparent and electrically insulating isolation regioninterposed between the amplifying and optical detectionregions. The amplifying region achieves reduced facetreflectivity by being designed to have a large spot size,single-traverse mode waveguide amplifier oriented at anangle with respect to a crystal plane through thepreamplifier. The isolation region is preferably an airgap. |
公开日期 | 1992-01-25 |
申请日期 | 1991-07-10 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/89621] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | GTE LABORATORIES INCORPORATED |
推荐引用方式 GB/T 7714 | RIDEOUT WILLIAM C,HOLMSTROM ROGER P,EICHEN ELLIOT,et al. Monolithically integrated ridge waveguide semiconductor optical preamplifier. CA2046742A1. 1992-01-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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