Semiconductor light emitting device
文献类型：专利
| 作者 | FUKUDA MITSUO; SATO NORIFUMI |
| 发表日期 | 1990-08-13 |
| 专利号 | JP1990203584A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent the deterioration of oscillation spectrum and improve characteristics by arranging a plurality of electrode isolation trenches, making the bottom parts thereof reach current blocking layers, and electrically isolating electrodes. CONSTITUTION:Electrode isolation trenches 10 are dug up to current blocking layers 6, 7, in the manner in which the distance between the rough of the trench and an active layer 1 becomes (d). Hence, the isolation resistance between electrodes becomes nearly equal to material resistance of a clad layer 3 of the following dimension; the depth is (d), the width is nearly equal to the width of a light emitting region, and the length is equal to the width of the trench 10. As a result, high resistance is easily realized. When the trench width is small, the length of a region in which the current of an active layer 1 is not injected can be neglected, and current-optical output characteristics of the device do not change. Thereby, P-side electrodes 9 can be isolated by the trench 10 without deteriorating distributed feedback type semiconductor laser, and oscillation wavelength is changed by making nonuniform current flow in the active layer Further, a modulation signal can be applied to one of the P-side electrodes 9, and stable modulation characteristics are obtained, so that characteristics of the device are improved. |
| 公开日期 | 1990-08-13 |
| 申请日期 | 1989-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89624]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | FUKUDA MITSUO,SATO NORIFUMI. Semiconductor light emitting device. JP1990203584A. 1990-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。