Distributed feedback semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NISHIDA TOSHIO; FUKUDA MITSUO; TAMAMURA TOSHIAKI |
| 发表日期 | 1991-05-10 |
| 专利号 | JP1991110884A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To intensify a confinement, to reduce an oscillation threshold value, to intensify a resistant property to a reflection against return light and to be compatible with a narrow spectral line width by a method wherein a coupling coefficient k of a diffraction grating installed in a resonator is endowed with a distribution. CONSTITUTION:An active layer 2 and, in succession, a guide (light waveguide) layer 3 are formed on a substrate 1; in addition, a diffraction grating is formed. That is to say, a diffraction-grating resist pattern is formed on the substrate by using a resist 20. During this process, the resist pattern is arranged in such a way that lines are thin and a space is wide in regions 12' at both ends and that a space is thin and lines are thick in a region 11' in the center; in addition, the pattern is etched by using an anisotropic etchant; the diffraction grating is obtained without any undercut. As a magnitude of a change in a refractive index by this etching operation, a change in a shape is small in the central region 11' of the diffraction grating and, accordingly, a coupling coefficient becomes small; the coupling coefficient becomes large in the regions 12' on both ends. Thereby, a confinement is intensified, an oscillation treshold value is reduced, a resistant property to a reflection against return light is intensified and a narrow spectral line width can be made compatible. |
| 公开日期 | 1991-05-10 |
| 申请日期 | 1989-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89625]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NISHIDA TOSHIO,FUKUDA MITSUO,TAMAMURA TOSHIAKI. Distributed feedback semiconductor laser and manufacture thereof. JP1991110884A. 1991-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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