Semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI |
| 发表日期 | 1988-04-27 |
| 专利号 | JP1988096987A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To narrow the half value width of a far-field pattern and to sharpen a single peak pattern by widening a branch path from an optical end face toward couplers. CONSTITUTION:A waveguide 11 has a stripelike branch waveguide 13 extended from a coupler 12 toward both optical end faces 11a and 11b in such a manner that the width of the waveguide 13 is broadened toward the coupler 12. Thus, the couplings of the waveguides 13 therebetween is strengthened to strengthen the optical electric field distribution of 0-order mode, and a phase locking is effectively performed. Accordingly, the half value width of a far field pattern is narrowed. Further, two branch waveguides 13 are formed in a structure that the waveguides are displaced by half a pitch to obtain a semiconductor laser in which the 0-order mode easily rises to effectively exhibit a sharpened single peak far-field pattern. |
| 公开日期 | 1988-04-27 |
| 申请日期 | 1986-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89628]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI. Semiconductor laser. JP1988096987A. 1988-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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