Quantum nanostructure semiconductor laser
文献类型：专利
| 作者 | OGURA, MUTSUO |
| 发表日期 | 2006-03-09 |
| 专利号 | US20060050753A1 |
| 著作权人 | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum nanostructure semiconductor laser |
| 英文摘要 | A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength stability. The laser has a stripe-shaped ridge with a plurality of V-grooves formed on a compound semiconductor substrate in the direction of laser beam emisson, with the V-grooves being arrayed in parallel, with each V-groove extending orthogonally to the direction of laser beam emission. On the ridge, an optical waveguide is provided that comprises a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process. The quantum wires are formed to a finite length corresponding to the stripe width of the laser beam, and are each located at a position corresponding to a V-groove, thereby constituting the laser active region. The optical waveguide is trapezoidal in shape, and has a peripheral sidewall that is at least as high as a height at which the quantum wires are located, and is exposed or covered only by an insulation layer. |
| 公开日期 | 2006-03-09 |
| 申请日期 | 2005-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89633]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | OGURA, MUTSUO. Quantum nanostructure semiconductor laser. US20060050753A1. 2006-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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