Semiconductor laser
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1989-07-17 |
| 专利号 | JP1989179481A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize a high speed modulation by a method wherein a semiconductor layer is provided to the inside of a clad layer so as to make its side face brought into contact with a buried layer, and a built-in voltage at the contact face is made lower than one between the above clad layer and the buried layer. CONSTITUTION:An n-type InGaAsP layer 8 and an n-type InP clad layer 9 are inserted in between an n-type InP substrate 1 and an InGaAsP active layer 2. And, a built-in voltage of an interface, where the n-type InGaAsP layer 8 and a P-type InP buried layer 4 are brought into contact with each other, is made smaller than that of an interface where the buried layer 4 and the substrate 1 which serves also as a clad layer are brought into contact with each other. By these processes, the rise of a current of a pn junction composed of the buried layer 4 and the layer 8 is made faster than that of a pn junction composed of the buried layer 4 and the substrate 1, so that a parasitic capacitance between electrodes 6 and 7 is made to decrease and a high speed modulation can be realized. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89639]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Semiconductor laser. JP1989179481A. 1989-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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