Semiconductor element
文献类型：专利
| 作者 | ISHIKURA TAKURO |
| 发表日期 | 1986-06-02 |
| 专利号 | JP1986115365A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To prevent deterioration due to heat generation by forming constitution in which a melting-in to a growth layer of an internal current constriction layer is prevented. CONSTITUTION:A GaAs layer 5 is shaped so that a p type GaAlAs clad layer 6 is grown easily in a liquid-phase manner. A GaAlAs layer 4 obviates the melting-in of an n type GaAs layer 3 into the p type GaAlAs clad layer 6 when the layer 6 grows. The melting-in of Ga1-xAlxAs to a Ga solution reduces with the increase of x. Accordingly, when the p type GaAlAs clad layer 6 grows on the GaAs layer 5, a melting-in more than the GaAs layer 5 melts into the layer 6 is prevented by the GaAlAs layer 4 under the layer 5 though the GaAs layer 5 melts into the layer 6. |
| 公开日期 | 1986-06-02 |
| 申请日期 | 1984-11-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | ISHIKURA TAKURO. Semiconductor element. JP1986115365A. 1986-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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