Semiconductor laser element
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1986-12-23 |
| 专利号 | JP1986292983A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element, the side section of a light- emitting region thereof is difficult to be deteriorated and which has high reliability, by making the width of an impurity introducing region for constricting currents narrower than the spreading width of majority carriers. CONSTITUTION:A diffusion layer (a diffusion layer for constricting current) 11 reaching up to the depth of the intermediate section of a clad layer 9 as the lower layer of a cap layer 10 from the cap layer 10 is formed in the semiconductor laser element. The diffusion layer 11 for constricting currents consists of a p-type diffusion layer by the partial diffusion of zinc. The width of the diffusion layer 11 for constricting currents takes size of the degree that majority carriers do not reach the side edge of a light-emitting region, even by the spreading of majority carriers. That is, the width of the light-emitting region takes size the same as or slightly wider than the sum of twice the spreading width of majority carriers and current constriction width. When the width of a channel 6 is gradually made wider than approximately 12mum, laser beams are emitted at two positions, and approximately 12mum is proper at its maximum as the width of the channel 6. |
| 公开日期 | 1986-12-23 |
| 申请日期 | 1985-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Semiconductor laser element. JP1986292983A. 1986-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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