Semiconductor laser
文献类型：专利
| 作者 | HATTORI AKIRA |
| 发表日期 | 1990-02-23 |
| 专利号 | JP1990054596A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To produce with scarce current leakage and stable and high yield by forming one or a plurality of semiconductor layers including a current block layer and a reverse conductivity type semiconductor layer as a buffer layer on a part except a current injection groove between the block layer and a lower clad layer. CONSTITUTION:A double heterostructure is formed, in the manufacture of a semiconductor laser, by forming a protrusion ridge on a semiconductor substrate 1, growing a current block layer 2 and a buffer layer 9 thereon, then forming a current injection groove 7, and then sequentially growing a lower clad layer 3, an active layer 4, an upper clad layer 4 and a contact layer 6. If a P-type GaAs buffer layer 9 is formed between the layers 2 and 3, lower clad melt is brought into contact with the layer 9. Accordingly, even if the layer 9 is melted back at the lower clad melted layer, the P-type carrier concentration of the layer 3 is not reduced, and a P-N junction between the layers 3 and 2 can be stably realized. |
| 公开日期 | 1990-02-23 |
| 申请日期 | 1988-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89647]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA. Semiconductor laser. JP1990054596A. 1990-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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