Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUJIWARA MASATOSHI |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114582A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To realize a narrow mesa by a method wherein a resist pattern used to form a mesa is removed after an insulating film has been formed. CONSTITUTION:Required crystal growth layers, i.e., an n-InP layer 2, a p-InP layer 3, an n-InP layer 4, a p-InP layer 5, an active layer 6, an n-InP layer 7 and an n-InGaAsP layer 8, are grown on a p-InP substrate 1; after that, the whole surface is coated with a resist 9; the resist 9 is patterned to be a required shape; a mesa etching operation is executed by making use of this resist pattern as a mask so that the active layer 6 is included at the inside of a mesa. Then, the resist pattern of the resist 9 which has been used as the mask is left as it is; an insulating film 10 is formed on the whole surface from its upper part. Then, the insulating film 10 at the upper part is removed together with the resist 9 which has been left at the upper part of the mesa; after that, an n- electrode 11 is formed on the side of the mesa part and a p-electrode 12 is formed on the side of the p-InP substrate Thereby, a narrow mesa can be realized. |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASATOSHI. Manufacture of semiconductor laser. JP1990114582A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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