Semiconductor laser element
文献类型：专利
| 作者 | YONEZU HIROO |
| 发表日期 | 1984-09-11 |
| 专利号 | JP1984161086A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a large number of longitudinal modes by forming partial irregularities to a side wall constituting the difference of refractive indexes for controlling a lateral mode in the direction parallel with an active layer and partially reflecting a lateral mode advancing in the direction of an optical axis. CONSTITUTION:An N-Al0.35Ga0.65As clad layer 202, an Al0.05Ga0.95As active layer 203, an Al0.35Ga0.65As clad layer 204 and an N-GaAs cap layer 205 are formed on an N-GaAs substrate 200, to which a groove 201 is bored, in succession through a liquid phase growth method. The groove 201 is buried flatly with N-Al0.35Ga0.65As at that time. Striped selective Zn diffusion is made reach to the P-Al0.35Ga0.65As clad layer 204 from the surface of the N-GaAs cal layer 205. Consequently, a P type Zn diffusion region 206 can be formed. A P type ohmic electrode 207 of Au/Pt/Ti is formed on the surface of the cap layer 205 and an N type ohmic electrode 208 of Au-Ge-Ni on the surface of the N-GaAs substrate 200 respectively. When currents are flowed in the forward direction, a laser oscillation is generated in an active layer 209 on the groove 20 |
| 公开日期 | 1984-09-11 |
| 申请日期 | 1983-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YONEZU HIROO. Semiconductor laser element. JP1984161086A. 1984-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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