Semiconductor laser device
文献类型：专利
| 作者 | NAITO HIROKI; SHIMIZU YUICHI |
| 发表日期 | 1992-11-12 |
| 专利号 | JP1992322482A |
| 著作权人 | 松下電子工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device which is used as a light source for a compact disk player, a printer or the like and whose operating current value is low. CONSTITUTION:A p-type Ga0.5Al0.5As clad layer 5 whose forbidden band widthis larger than that of a Ga0.9Al0.1As active layer 4 and whose conductivity type is different from that of the active layer and an n-type Ga0.5Al0.5As layer 3 formed on an n-type GaAs substrate 1 so as to sandwich the active layer 4; a ridge 5a is formed in one part of the p-type Ga0.5Al0.5As clad layer 5. An n-type Ga0.45Al0.55As layer 6 whose refractive index is smaller than that of the p-type Ga0.5Al0.5As clad layer 5 and whose conductivity type is different is formed in regions other than the ridge 5a. |
| 公开日期 | 1992-11-12 |
| 申请日期 | 1991-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電子工業株式会社 |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,SHIMIZU YUICHI. Semiconductor laser device. JP1992322482A. 1992-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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