Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IMANAKA KOUICHI; MATOBA AKIHIRO; HORIKAWA HIDEAKI; OGAWA HIROSHI |
| 发表日期 | 1986-01-21 |
| 专利号 | JP1986013683A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To maintain oscillation at a single wavelength even when an external temperature changes by forming two semiconductor laser sections shaped by dividing one resonator into two into the same chip. CONSTITUTION:A V groove 2 is formed onto the surface of an N-InP substrate 1 in the direction. An N-InP first clad layer 3, a GaInAsP active layer 4, a P-InP second clad layer 5 and a P GaInP ohmic-contact layer 6 are grown on the substrate 1 in a multilayer manner in succession. Consequently, the layer 3 grows only on the surface of the substrate 1 on the outside of the groove 2, the layer 4 grows in the groove 2 and on the whole surface on the layer 3, and the layer 5 and the layer 6 also grow on the whole surface. The wafer is mesa- etched until mesa etching reaches to the layer 3 from the layer 6 so that the stripe direction is directed in the direction, thus obtaining stripe structure 7. Current stopping regions 8 are grown on the layers 3 on both sides of structure 7. According to the constitution, laser sections 11a, 11b uniformly expand or shrink by the change of an external temperature, thus maintaining oscillation at a single wavelength. |
| 公开日期 | 1986-01-21 |
| 申请日期 | 1984-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89659]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,MATOBA AKIHIRO,HORIKAWA HIDEAKI,et al. Semiconductor laser and manufacture thereof. JP1986013683A. 1986-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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