Semiconductor laser element
文献类型：专利
| 作者 | TAKENAKA TAKUO; KANEIWA SHINJI; YANO MORICHIKA |
| 发表日期 | 1984-03-08 |
| 专利号 | JP1984041885A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To eliminate the adverse effects caused by a current blocking layer wherein Te is doped and to impart long life operation characteristics, by adding a GaAs buffer layer on a Te doped N GaAs current blocking layer. CONSTITUTION:On a Zn doped P GaAs substrate 21, a current blocking layer 22 comprising Te doped N GaAs is grown by a liquid phase epitaxial growing method. Then a buffer layer 23 comprising undoped GaAs or Si doped N GaAs is grown. Thereafter, a stripe shaped groove 24 is etched from the buffer layer 23 to the substrate 2 Then, a first clad layer 25, an active layer 26, a second clad layer 27, and a cap layer 28 are sequentially deposited by the liquid phase epitaxial growing method again. Thereafter a P type electrode 29 and an N type electrode 30 are evaporated and formed. Then the wafer is divided with the stripe groove 24 as the center, and the end surface of a resonator is formed by a cleaving method. |
| 公开日期 | 1984-03-08 |
| 申请日期 | 1982-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TAKENAKA TAKUO,KANEIWA SHINJI,YANO MORICHIKA. Semiconductor laser element. JP1984041885A. 1984-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。