Semiconductor laser device
文献类型：专利
| 作者 | INOUE TOKUO; AOYAMA SHIGERU; OGATA SHIRO |
| 发表日期 | 1989-07-03 |
| 专利号 | JP1989168089A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to change wavelengths and to stabilize the wavelengths highly accurately, by coating the rear surface of a micro-fresnel lens with a reflecting film, forming an outer mirror, forming two outer resonators on both end surfaces of a semiconductor laser, and displacing both lenses in synchronization with piezoelectric elements. CONSTITUTION:The perfectly same lens members 2 and 3 are arranged on the sides of the two emitting surfaces of a semiconductor laser A planar micro-fresnel lens 21 is provided on the surface of the lens member 2 on the side of the semiconductor laser A reflecting film 22 is evaporated on the rear surface of the lens member 2. A reflectivity r=0.1 is adjusted. An outer resonator having a resonator length L is equivalently formed between the semiconductor laser 1 and the reflecting film 22. The other lens member 3 has the perfectly same structure. The distances from the semiconductor laser 1 are made equal. The resonance lengths are set at the accurately same length with piezoelectric elements 6 and 7. The optical waves of both outer resonators are made to be in the perfectly same mode. |
| 公开日期 | 1989-07-03 |
| 申请日期 | 1987-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | INOUE TOKUO,AOYAMA SHIGERU,OGATA SHIRO. Semiconductor laser device. JP1989168089A. 1989-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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