Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | ANAYAMA CHIKASHI |
| 发表日期 | 1992-03-06 |
| 专利号 | JP1992072785A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which is excellent in current constriction and low threshold current through manufacturing processes smaller in number by a method wherein a current block layer discontinuously formed on a semiconductor substrate, a lower clad layer formed on the current block layer and the side face of the step of the semiconductor substrate, and an upper clad layer deposited on the active layer are provided. CONSTITUTION:A buffer layer 12 is formed on a substrate 10 provided with a step, and a current blocking layer 14 is formed on the buffer layer 12, the buffer layer 12 and the current block layer 14 are discontinuously laminated as divided into two pieces at the step respectively. A double hetero-structure composed of a clad layer 18, an active layer 18, and a clad layer 20 is formed thereon. Furthermore, a contact layer 22 is formed thereon, an electrode layer 24 serving as an N-side electrode is formed on the contact layer 22, and an electrode layer 26 serving as a P-side electrode is formed on the underside of a substrate 10. In this semiconductor laser device, as the current block layer 14 whose conductivity type is opposite to that of the substrate 10 is interrupted at the side of the step to constitute an interrupted part, the buffer layer 12 is brought into contact with the clad layer 16 at the side face of the step concerned, in result an excellent current constriction structure where a current is made to flow through only the contact area concerned can be realized. |
| 公开日期 | 1992-03-06 |
| 申请日期 | 1990-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89669]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ANAYAMA CHIKASHI. Semiconductor laser device and manufacture thereof. JP1992072785A. 1992-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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