Optoelectronic integrated circuit device
文献类型：专利
| 作者 | KURODA KENICHI; OOTA ATSUSHI |
| 发表日期 | 1987-07-21 |
| 专利号 | JP1987165386A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit device |
| 英文摘要 | PURPOSE:To facilitate forming electrodes of a semiconductor laser part and a driving electronic device part on a same plane and facilitate photolithography by a method wherein a TJS type laser in which an anode and a cathode are provided in a same plane is employed as the semiconductor laser part and a part of the region other than the laser part is removed and the driving elec tronic device is formed on the part after removal. CONSTITUTION:An undoped AlGaAs layer 15, a lower cladding layer 16, an active layer 17, an upper cladding layer 18 and a cap layer 19 are formed over the whole surfaces of a semi-insulating substrate 14. The respective layers 15, 16, 17, 18 and 19 form a polycrystalline GaAs/AlGaAS layer 30 on a dielec tric film 29. Selective diffusion and driving of Zn are performed to form a TJS type semiconductor laser part 33. At that time, the surface of the semi- insulating substrate 14 under the dielectric film 29 is protected by the dielectric film 29. A part of the polycrystalline GaAs/AlGaAS layer 30 is removed by etching and a part of the semi-insulating substrate 14 is exposed and a high resistance AlGaAs layer 22 and an FET active layer 23 are selectively made to grow on that exposed surface to form an FET part 34 and further electrodes 24-28 are formed. |
| 公开日期 | 1987-07-21 |
| 申请日期 | 1986-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KURODA KENICHI,OOTA ATSUSHI. Optoelectronic integrated circuit device. JP1987165386A. 1987-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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