Semiconductor substrate
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; ONO YUUICHI; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1985-07-17 |
| 专利号 | JP1985134415A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor substrate |
| 英文摘要 | PURPOSE:To obtain a semi-insulating substrate of low dislocation density by a method wherein on the compund single crystal substrate, a single crystal epitaxial layer having a different lattice constant therefrom is superposed, and one layer is superposed moreover when it is needed. CONSTITUTION:Dislocation in a substrate crystal is succeeded to an epitaxial layer, composition of the epitaxial layer is changed along the growth direction to change the lattice constant, dislocation in the epitaxial layer can bring the axis of dislocation to have a component perpendicular to the growth direction, and the quantity of dislocation to penetrate to the surface of the epitaxial layer can be reduced. When the lattice constant of the substrate is indicated by a0, and the lattice constant of the epitaxial layer is by a1 (at the case of a multilayer, an average value is adopted), it is effective to select to 2X10= as a criterion, and to make the thicknss of the epitaxial layer to 300mum or more roughly. |
| 公开日期 | 1985-07-17 |
| 申请日期 | 1983-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89676]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,ONO YUUICHI,KAYANE NAOKI,et al. Semiconductor substrate. JP1985134415A. 1985-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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