Manufacture of semiconductor device
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; YAMASHITA SHIGEO; KAJIMURA TAKASHI |
| 发表日期 | 1987-06-13 |
| 专利号 | JP1987131592A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To implement mass production, by performing etching with macromolecular films, which are formed on the electrode surface of a semiconductor laser wafer, as mask materials, forming end surfaces for taking out emitted light outputs, depositing an insulating film on the one entire surface, and removing the insulating film and the macromolecular films, which are formed on the electrode. CONSTITUTION:On an N-type substrate crystal 1, a double heterojunction epitaxial crystal layer 2 is grown. A P-type electrode and an N-type electrode 4 are formed. A macromolecular resin film 5 is formed on the P-type electrode 3. A pattern for an end-surface machining region is printed and developed. Thus the stripe shaped macromolecular films 5 are formed. With the macromolecular films 5 as masks, the P-type electrode 3 is etched away. The crystal 2 is etched to a depth reaching the substrate crystal Approximately vertical grooves, i.e., end surfaces for taking out light outputs emitted from a laser, are formed. Then, an insulating film 6 is deposited. The macromolecular resin films 5 on the electrode surface are removed and a chip is obtained. |
| 公开日期 | 1987-06-13 |
| 申请日期 | 1985-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,YAMASHITA SHIGEO,KAJIMURA TAKASHI. Manufacture of semiconductor device. JP1987131592A. 1987-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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