Double heterojunction type semiconductor laser
文献类型：专利
| 作者 | SAKAMOTO MASAMICHI; KAISE KIKUO |
| 发表日期 | 1988-02-17 |
| 专利号 | JP1988036590A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double heterojunction type semiconductor laser |
| 英文摘要 | PURPOSE:To implement simplification in manufacturing, stabilization of characteristics, improvement of reliability and the like and to improve astigmatism and a threshold current value, by providing one step part on a substrate, and providing the thickness of a clad layer on the substrate side so that light in an active layer is hardly absorbed by the substrate in the entire region. CONSTITUTION:One step part 21 is formed on a semiconductor substrate A first clad layer 2 is formed on a semiconductor substrate 1 having said step part 2 The thickness of the layer 2 is made to have a value so that light loss is hardly yielded by absorption of the light when the light from an active layer 3 reaches the semiconductor substrate 1 in the entire region. For example, the first clad layer 2 comprising n-type Al0.45Ga0.55As is formed to a thickness of about 5 mum on the n-type GaAs single crystal substrate 1, on which the step part 21 is formed. An active layer 3 of Al0.10Ga0.90As is formed to a thickness of 500Angstrom the layer 3, p-type Al0.45Ga0.55As is formed to a thickness of about 5mum. An n-type GaAs cap layer 6 is further formed to a thickness of about 0.5mum. Then, p-type impurity Zn is selectively diffused or ions are implanted, and a current conducting region 22 is formed. |
| 公开日期 | 1988-02-17 |
| 申请日期 | 1986-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | SAKAMOTO MASAMICHI,KAISE KIKUO. Double heterojunction type semiconductor laser. JP1988036590A. 1988-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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