Semiconductor laser
文献类型：专利
| 作者 | YOSHIDA ICHIRO; KATSUYAMA TSUKURU |
| 发表日期 | 1992-05-01 |
| 专利号 | JP1992130689A |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold value and to perform a continuous oscillation by forming a well structure of an energy band due to a difference of composition ratios of an active layer doped with Al of a photoconductive layer and a light confining layer and applying a compression stress to the active layer. CONSTITUTION:An n-type AlGaInP clad layer 5, an AlGaInP photoconductive layer 6 and a p-type AlGaInP clad layer 7 are provided, and a well structure of an energy band is formed in the layer 6. Electrons and holes injected from an n-type electrode 3 and a p-type electrode 11 are confined in an AlGaInP strain active layer 62 to irradiate a light. Here, the lattice constant (a) of the layer 62 becomes larger by predetermined a than that (a) of an n-type GaAs substrate 2 and a compression stress is always applied, thereby reducing an oscillation threshold value. Accordingly, an oscillation threshold value is enhanced by Al doping to perform a continuous oscillation. |
| 公开日期 | 1992-05-01 |
| 申请日期 | 1990-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | YOSHIDA ICHIRO,KATSUYAMA TSUKURU. Semiconductor laser. JP1992130689A. 1992-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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