Manufacture of semiconductor optical element
文献类型：专利
| 作者 | SAKU TADASHI; IWAMURA HIDETOSHI; KUBODERA KENICHI |
| 发表日期 | 1984-02-21 |
| 专利号 | JP1984032137A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor optical element |
| 英文摘要 | PURPOSE:To obtain a vertical end surface by providing a optical active layer on a semiconductor substrate, forming a mask on one side surface of an epitaxial wafer having a p-n junction and an ohmic electrode on the other surface of the wafer, dipping it in an aqueous electrolyte solution and etching it with the ohmic electrode as a negative electrode. CONSTITUTION:An n type InP layer 22, an InGaAsP active layer 23, a p type InP layer 24, and an n type InGaAsP layer 25 are superposed on an n type InP substrate 21, an Zn diffused layer 26 is formed, and the prescribed ohmic electrodes 27, 28 are attached. A resist mask 31 is covered on a p type ohmic electrode 28, and the electrode 27 is secured to a glass plate 44 with conductive adhesive 43. It is then dipped in aqua regia solution, and etched in the prescribed current density with a Pt plate as a positive electrode and the wafer as a negative electrode. According to this method, the side surface etching amount of the active layer is largely reduced as compared with the chemical etching of no voltage, the flatness can be remarkably improved, and the undercut amounts of the layers 24, 25 are significantly reduced, and the vertical degree can be remarkably improved. |
| 公开日期 | 1984-02-21 |
| 申请日期 | 1982-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | SAKU TADASHI,IWAMURA HIDETOSHI,KUBODERA KENICHI. Manufacture of semiconductor optical element. JP1984032137A. 1984-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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