Process for growing semiconductor crystal
文献类型：专利
| 作者 | KURAMATA, AKITO |
| 发表日期 | 1992-04-01 |
| 专利号 | EP0477374A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Process for growing semiconductor crystal |
| 英文摘要 | A process for growing III to V compound semiconductors containing arsenic and phosphorus, particularly a mixed crystal of InGaAsP, on a substrate by vapor phase epitaxy from a starting gas mixture comprising AsH₃ or H₂AsCnH2n+1 (wherein n is 1, 2 or 3) as the arsenic source, H₂PC₄H₉ as the phosphorus source, and a group III element source. A mixed crystal free from any unevenness in the distribution of composition can be grown on the substate, because there is no difference in the thermal decomposition temperature between AsH₃ or H₂AsCnH2n+1 and H₂PC₄H₉. |
| 公开日期 | 1992-04-01 |
| 申请日期 | 1991-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | KURAMATA, AKITO. Process for growing semiconductor crystal. EP0477374A1. 1992-04-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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