Semiconductor laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI; MORI YOSHIFUMI |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225987A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To effectively avoid that a leakage current is generated by a method wherein the band gap of a current-blocking layer of a first conductivity type and a second clad layer of a second conductivity type is made larger than the band gap of a clad layer of the first conductivity type and a first clad layer of the second conductivity type. CONSTITUTION:A second clad layer 7 [p2] of a second conductivity type, e.g. a p-type, and a current-blocking layer 6 [n2] of a first conductivity type, e.g. an n-type, form a p-n junction; a first clad layer 5 [p1] of the second conductivity type and a clad layer 3 [n1] of the first conductivity type form a p-n junction via an active layer 4. The band gap of the regions p2 and n2 is larger than the band gap of the regions p1 and n As a result, even when a bias voltage corresponding to about a builtin potential of the p-n junction between the regions p1 and n1 is applied to a semiconductor laser, an electric current hardly flows to the junction between the regions p2 and n2 because a built-in potential of the p-n junction between the regions p2 and n2 is higher. It is possible to avoid that a leakage current is generated. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI,MORI YOSHIFUMI. Semiconductor laser. JP1991225987A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。