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文献类型：专利
| 作者 | TSUCHA MASAAKI; HANEDA MAKOTO |
| 发表日期 | 1993-09-29 |
| 专利号 | JP1993068872B2 |
| 著作权人 | HITACHI TOBU SEMIKONDAKUTA KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce leakage currents by forming a buried layer formed to the upper section of a blocking layer extending on both sides of an active layer in double layer structure, bringing impurity concentration in a lower layer in the buried layer in concentration in which the lower layer is not inverted into a p type on the manufacture of the buried layer and shaping an upper layer in the buried layer in a high resistance layer. CONSTITUTION:A p type InP blocking layer 6, a buried layer 7 consisting of an n type InP buried lower layer 16 and an n type InP buried upper layer 17 and an InGaAsP cap layer 8 are buried continuously to a section indented through etching through a liquid phase epitaxial method in succession. Impurity concentration in the layer 6 is brought to a value such as 1X10 atoms.cm, and impurity concentration in the buried lower layer 16 shaped so as to constitute a p-n junction between the layer 6 and the lower layer 16 is brought to a value such as 2X10atoms.cm, and these layers 6, 16 are formed in concentration and thickness in which they are not inverted into a p type on the formation of the buried layer 17 and the cap layer 8. Accordingly, leakage currents passing through the buried lower layer 16, the blocking layer 6 and a buffer layer 2 through the buried upper layer 17 from a clad layer 4 and an ohmic contact layer 12 are hardly generated. |
| 公开日期 | 1993-09-29 |
| 申请日期 | 1984-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI TOBU SEMIKONDAKUTA KK |
| 推荐引用方式 GB/T 7714 | TSUCHA MASAAKI,HANEDA MAKOTO. -. JP1993068872B2. 1993-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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