Semiconductor laser
文献类型：专利
| 作者 | MINAGAWA SHIGEKAZU; KONDO MASAHIKO; YANAGISAWA HIRONORI |
| 发表日期 | 1992-10-08 |
| 专利号 | JP1992283979A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To achieve an n-type cladding layer with a high positive hole concentration without deteriorating characteristics of laser when allowing AlGaInP double hetero crystal for visible semiconductor laser to be grown by the organic metal vapor growth method. CONSTITUTION:Beryllium is doped on a p-AlGaInP layer by using alkyl beryllium such as dimethyl beryllium in the organic metal crystal growth method. Even if a p-AlGaInP cladding layer with a high positive hole concentration exceeding 5X10cm is formed, a laser with a long life can be obtained. Also, a high temperature for achieving oscillation can be obtained as a result of a high-concentration doping. |
| 公开日期 | 1992-10-08 |
| 申请日期 | 1991-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89715]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MINAGAWA SHIGEKAZU,KONDO MASAHIKO,YANAGISAWA HIRONORI. Semiconductor laser. JP1992283979A. 1992-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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