Semiconductor laser array device
文献类型：专利
| 作者 | HAMADA TAKESHI; WADA MASARU; KUME MASAHIRO; ITO KUNIO |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248583A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array device |
| 英文摘要 | PURPOSE:To obtain a phase synchronizing type semiconductor laser array with good reproducibility, by providing a smaller distance between the protruded parts in the area of the group of grooves formed in a substrate and an active layer at the outside of the outermost groove, and providing a larger distance at the inner part of said group. CONSTITUTION:A mesa is formed on the surface of a p-type GaAs substrate Then, an n-type GaAs blocking layer 2 is formed on the substrate Thereafter, a plurality of parallel ridges, which form a plurality of grooves, are formed on the surface of the wafer. Then, on the mesa, on which the ridges are formed, a p-type GaAlAs clad layer 3, a GaAlAs active layer 4, an n-type GaAlAs clad layer 5 and an n-type GaAs contact layer 6 are continuously grown. At this time, the inner ridge between the grooves is melted back, and the height of the ridge becomes lower. Therefore, the distance between the surface of the protruded part and the layer 4 becomes long, and the light absorption at the protruded part is decreased. Thus optical coupling between light emitting parts is carried out efficiently. As a result, the phase synchronizing type laser array can be obtained with good reproducibility. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI,WADA MASARU,KUME MASAHIRO,et al. Semiconductor laser array device. JP1986248583A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。