Semiconductor light-emitting device
文献类型：专利
| 作者 | IMAI HAJIME |
| 发表日期 | 1990-07-30 |
| 专利号 | JP1990192785A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To realize a laser having high oscillation efficiency by providing multiple well layers within a semiconductor layer structure such that widths of the wells are decreased gradually from the electron injected side and that the wells have the same quantum units. CONSTITUTION:A semiconductor layer is produced by forming a clad layer 2 of one conductivity type, multiple quantum well layers 5-7, a clad layer 8 of the opposite conductivity type and a contact layer 9 on a substrate 1 sequentially in that order. The well layers 5-7 are formed such that widths of the wells are decreased gradually from the electron injected side towards the center of the device. Further, the wells 5-7 have different compositions from each other so as to align quantums of the wells with each other. Accordingly, injected electrons are stored uniformly in the quantum wells 5-7 and a laser presenting a high oscillation efficiency can be realized. Such laser is accomplished by forming electrodes on the lower face of the substrate and on the upper face of the contact layer 9 and cleaving the substrate 1 at a length of a resonator. |
| 公开日期 | 1990-07-30 |
| 申请日期 | 1989-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89725]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light-emitting device. JP1990192785A. 1990-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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