Optical integrated circuit device
文献类型：专利
| 作者 | KIMURA SOICHI; SHIBATA ATSUSHI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143279A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit device |
| 英文摘要 | PURPOSE:To prevent an increase in laser oscillation threshold value due to the second time epitaxial growth as well as to suppress cost by forming a transistor region and a luminous region at a time by one time epitaxial growth. CONSTITUTION:An n-type InP layer 2, a p-type InGaAsP layer 3 and an n-type InP layer 4 are made to epitaxial grow by turns on a semiinsulating InP substrate Next, a p-type impurity diffusion layer 5 and a p-type impurity diffusion layer 6 are formed by using p-type impurities (for instance, II group elements such as Zn and Cd). Then, the n-type InP layer 4 is selectively removed by etching. At this time, part of the p-type impurity diffusion layer 6 and part of the n-type InP layer 4 and of the p-type impurity diffusion layer 5, which are surrounded by it, are left behind. Next, the p-type InGa AsP layer 3 is selectively removed by etching. Next, after selectively etching the n-type InP layer 2 and the semiinsulating substrate 1 to form a groove, the groove is filled by applying photosensitive resin for being exposed so as to leave the photosensitive resin 7 only on the groove. Finally, an insulating film 8 is formed by a common insulating film process so as to form electrodes on each layer. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89729]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,SHIBATA ATSUSHI. Optical integrated circuit device. JP1989143279A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。