Multiwavelength integrated semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1988-12-20 |
| 专利号 | JP1988311787A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiwavelength integrated semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate integrating laser elements with different oscillation wavelengths without a built-in deflection lattice by a method wherein the mutually different compositions of the active layers of a plurality of the semiconductor laser elements are provided. CONSTITUTION:An n-type GaAs buffer layer 102 and an n-type AlGaAs cladding layer 103 are formed on an n-type GaAs substrate 101 in this order by a metal organic vapor deposition method (MOCVD method) and, successively, an Al0.01 Ga0.99As active layer 104, an Al0.05Ga0.95As active layer 105, an Al0.1Ga0.9As active layer 106 and an Al0.15Ga0.85As active layer 107 are formed by an optical MCVD method with an excimer laser and, further, a P-type Al0.5Ga0.5As cladding layer 108 and a P-type GaAs contact layer 109 are formed by MOCVD. Thus, even if a deflection lattice is not provided, the compositions of the active layers of a plurality of semiconductor laser elements can be mutually varied. With this constitution, a multiwavelength integrated semiconductor laser can be obtained. |
| 公开日期 | 1988-12-20 |
| 申请日期 | 1987-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Multiwavelength integrated semiconductor laser. JP1988311787A. 1988-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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