Double hetero junction type semiconductor laser
文献类型：专利
| 作者 | HAMADA HIROYOSHI; WATABE YASUHIRO |
| 发表日期 | 1983-10-25 |
| 专利号 | JP1983182287A |
| 著作权人 | SANYO DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero junction type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the amount of spontaneous light emission by a method wherein the carrier density of a P type clad layer is set over the fixed value, in a double hetero junction type semiconductor laser equipped with the P type and an N type clad layers respectively by sandwiching an active layer. CONSTITUTION:The double hetero junction type semiconductor laser is equipped with the N type clad layer 2 and the P type clad layer 4 by sandwiching the active layer 3. The both clad layers 2 and 4 have energy band gaps wider than that of the active layer 3, and the light refractive index is set small. In such a semiconductor laser, the relation between the carrier density of the P type clad layer and the amount of spontaneous light emission is when the carrier density becomes 10/cm or more, the amount of spontaneous light emission decreases rapidly. Therefore, the amount of spontaneous light emission can be reduced by selectively the carrier concentration in such a manner. |
| 公开日期 | 1983-10-25 |
| 申请日期 | 1982-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO DENKI KK |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,WATABE YASUHIRO. Double hetero junction type semiconductor laser. JP1983182287A. 1983-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。