Manufacture of semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1992-04-07 |
| 专利号 | JP1992105384A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to reduce a leakage current, to make a laser oscillate in a low threshold current and moreover, to make it possible to form easily a contact electrode by a method wherein lattice defects are made to introduce from an interdiffusion accelerating layer comprising an insulating film and a quantum well structure is disordered. CONSTITUTION:An n-type clad layer 2, a quantum well active layer 3, a p-type clad layer 4 and a p-type GaAs cap layer 5 are formed in order on an N-type GaAs substrate Then, a mask 6, from which parallel two striped regions are removed, is formed, an etching is performed until the layer 3 is exposed and groove regions 7 are formed. At this time, a striped luminous region 8 is formed. After this, an insulating film 9 is formed, a photoresist 10 is applied, the resist 0 is etched and removed until a growth surface is exposed using oxygen ions 11 and the film 9 only exposed on the growth surface is removed. After that, a heat treatment is performed, defects, such as pores or the like, are introduced from the interior of the film 9, a semiconductor denaturation layer 12 is formed only in the parts of the groove regions 7 and the layer 3 in the vicinities of the side surfaces of the region 8 is disordered. |
| 公开日期 | 1992-04-07 |
| 申请日期 | 1990-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89736]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Manufacture of semiconductor laser. JP1992105384A. 1992-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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