Transverse buried type surface emitting laser
文献类型：专利
| 作者 | OGURA MUTSURO; SHIN CHIYAN WAN; UEI SHIN; SHII WAN |
| 发表日期 | 1988-12-27 |
| 专利号 | JP1988318195A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Transverse buried type surface emitting laser |
| 英文摘要 | PURPOSE:To improve the carrier entrapping efficiency so as to obtain a laser beam of a small diameter through a low threshold current by a method wherein a clad layer and a carrier injecting region of semiconductor with a broad forbidden band. CONSTITUTION:An lower reflecting layer consisting of 60 pairs of Al0.3Ga0.7As/ GaAs thin films, a GaAs active layer a half wavelength in thickness, an upper reflecting layer consisting of 20 pairs of the same thin films as those of the lower reflecting layer are formed on a substrate 5 and subjected to selective etching so as to leave an island-shaped form 2X8mum in size unremoved for the formation of a vertical optical resonator An n-Al0.4Ga0.6As layer and an n-GaAs cap layers 2 and 3 are formed on. the periphery of the resonator 1 through selective liquid growth. A window 14 is provided to an SiNX film 13 and Zn is diffused so as to form a p-type small carrier injecting layer 4. The injecting layer 4 has a such a structure as small number of carriers are laterally injected and prevented from diffusing laterally, so that an oscillating threshold value can be decreased and also a beam can be reduced in diameter. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1987-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO,SHIN CHIYAN WAN,UEI SHIN,et al. Transverse buried type surface emitting laser. JP1988318195A. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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