Semiconductor laser element
文献类型：专利
| 作者 | SUYAMA NAOHIRO; SEKI AKINORI; HOSOBANE HIROYUKI; KONDO MASAFUMI; HATA TOSHIO |
| 发表日期 | 1992-08-31 |
| 专利号 | JP1992242987A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser element of buried structure having remarkably low threshold current only with one time growth by using the MBE method that makes it possible to finely control the growth layer. CONSTITUTION:A semiconductor substrate 1 has a groove 2, 3, 4 and a stripe- shaped mesa region that is adjacently arranged on the both sides of the grooves. On the semiconductor substrate 1, a first clad layer 6, active layers 7, 7-l-4 and a second clad layer 8 are formed. The active layers 7-l, 7-3 on these grooves 2, 3, 4 are not continuous with the active layers 7-2, 7-4 on the mesa region. |
| 公开日期 | 1992-08-31 |
| 申请日期 | 1991-01-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUYAMA NAOHIRO,SEKI AKINORI,HOSOBANE HIROYUKI,et al. Semiconductor laser element. JP1992242987A. 1992-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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