Semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1988-07-22 |
| 专利号 | JP1988178578A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a noise due to astigmatism in the horizontal and vertical directions together with return light by dividing a waveguide structure in the interfacial direction of an active layer into two regions and gradually changing a waveguide structure of the junction part of two regions. CONSTITUTION:A semiconductor laser consists of an n-type Al0.45Ga0.55As layer 2, an Al0.15Ga0.35As active layer 3, a p-type Al0.45Ga0.55As layer 4, an n-type Al0.45Ga0.55As layer 5, an n-type Al0.55Ga0.45As layer 6, a p-type Al0.45Ga0.55As layer 8, a p-type GaAs layer 9, a p-electrode 10, an n-electrode 11 and a groove 12 on an n-type GaAs substrate The layers 5 and 6 are current block layers. Since the layer 6 has a smaller refraction index than those of the layers 4 and 5, an effective refraction index in the horizontal direction of the active layer 3 is made large at the part of the groove 12. Further, width of a stripe 19 corresponding to the groove 12 gradually changes from the first region to the second region, the stripe 19 takes a wedge shape at the junction part 23 of two different horizontal mode guidewave structures for continuously changing from a gain guidewave to a gain guidewave plus a refraction guidewave. |
| 公开日期 | 1988-07-22 |
| 申请日期 | 1987-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Semiconductor laser. JP1988178578A. 1988-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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