Manufacture of single wavelength laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI |
| 发表日期 | 1990-09-19 |
| 专利号 | JP1990237189A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of single wavelength laser |
| 英文摘要 | PURPOSE:To improve the yield by forming an active layer periodically in the direction of a laser resonator and then forming crystals having approximately the same equivalent refractive index as the active layer and no gain in the parts other than the active layer by crystal growth after then. CONSTITUTION:A first clad layer 2 of n-type InP, an InGaAsP active layer 3, and a second clad layer 4 of P-type InP are formed in that order on an n-type InP substrate A dielectric thin film is formed and dielectric masks 5 of a corresponding cycle to the excitation wavelength of a laser are formed by photoengraving and etched to form periodic etching grooves 6 reaching the clad layer 2. Semi-insulating InGaAsP layers 7 having approximately the same equivalent refractive index as the InGaAsP active layer 3 are formed in the etching grooves 6, the dielectric masks 5 are removed, and p-type InP third clad layer 8 and then a p-type InGaAsP contact layer 9 are grown. Thereby failures in forming diffraction gratings are decreased to obtain a high yield. |
| 公开日期 | 1990-09-19 |
| 申请日期 | 1989-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89740]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI. Manufacture of single wavelength laser. JP1990237189A. 1990-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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