Semiconductor laser device
文献类型：专利
| 作者 | KAYANE NAOKI; NAKATSUKA SHINICHI; KONO TOSHIHIRO; ONO YUICHI; KAJIMURA TAKASHI |
| 发表日期 | 1986-11-11 |
| 专利号 | JP1986253883A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve noise characteristic and to prevent astigmatism, by making refractivity difference extremely near the active layer in the vicinity of the end face, and making the refractivity difference with being spaced from the active layer in the inside of the device, in a case where there provided is a region of a stripe shape having different refractivity near the planar active layer to constitute a refractivity wave guide structure. CONSTITUTION:Outside of the trench 12, current does not flow because of the PNPN structure, and laser oscillation is caused only in the active layer near the trench 12. Since the bottom 13 of the trench 12 is near to the active layer 5 in the vicinity of the end face, oscillated laser mode is confined in the central section owing to the refractivity difference between the P-type clad layer 6 and buried layer 8. Since this is refractivity wave guiding, astigmatism does not result. In the meanwhile, refractivity difference between the GaAs layer 7 and buried layer 12 exists, but is spaced from the active layer 5, so the laser mode is less affected and the vertical mode becomes multi-mode oscillation. Thus there does not exist astigmatism and returning light noise can be reduced. |
| 公开日期 | 1986-11-11 |
| 申请日期 | 1985-05-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89746]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,NAKATSUKA SHINICHI,KONO TOSHIHIRO,et al. Semiconductor laser device. JP1986253883A. 1986-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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