Semiconductor light emitting element
文献类型：专利
| 作者 | OGURA MOTOTSUGU; SASAI YOICHI; MANNOU MASAYA; YOKOGAWA TOSHIYA; TAKAHASHI YASUHITO |
| 发表日期 | 1990-08-15 |
| 专利号 | JP1990205381A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a laser having small inner distortion and high reliability by burying both sides of a mesa stripelike clad layer with ZnSSe layer lattice- matched to a mesa stripelike AlGaInP active layer. CONSTITUTION:A sandwich type double hetero junction semiconductor light emitting element in which GaInP or AlGaInP formed on a GaAs board 1 is formed as an active layer 3, and the layer 3 is interposed between clad layers 2 and 10 having larger energy band gap than that of the layer 3, smaller refractive index than that of the layer 3 and containing at least AlGaInP or AlInP is provided. The layer 10 of the side different from the side of the board 1 is formed in a mesa stripe state, and both sides of the clad layer 10 are buried with a ZnSSe layer 13 lattice-matched to the mesa stripelike AlGaInP or AlInP clad layer or the GaInP or AlGaInP active layer 3 to form an index guide type structure. Thus, a semiconductor laser having small distortion therein and high reliability can be obtained. |
| 公开日期 | 1990-08-15 |
| 申请日期 | 1989-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGURA MOTOTSUGU,SASAI YOICHI,MANNOU MASAYA,et al. Semiconductor light emitting element. JP1990205381A. 1990-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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