Manufacture of semiconductor laser
文献类型：专利
| 作者 | OKI YOSHIMASA |
| 发表日期 | 1987-01-14 |
| 专利号 | JP1987007185A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate a work and to improve a yield by forming in advance a V-shaped groove on a substrate, preserving a groove shape thereon by an organic metal vapor phase growing method or a molecular beam epitaxial growing method to grow a laser structure, and then forming a cleaved resonance surface in the groove. CONSTITUTION:A pattern in which a photoresist is removed in a stripe state is formed on the surface of a substrate crystal 5, with the pattern as a mask, it is etched to remove the photoresist to form a V-shaped sectional groove 52. Then, a lower clad layer 2, an active layer 1, an upper clad layer 3 and a contacting layer 4 are sequentially grown by an MOSCVD method. At this time the condition that the groove shape does not almost change in the groove 52 is selected to refract at the grooves of the active layer and the layers. Then, after electrodes 6, 7 are deposited, a crystal waver is cleaved at the groove. Thus, a resonator end can be formed simply. |
| 公开日期 | 1987-01-14 |
| 申请日期 | 1985-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OKI YOSHIMASA. Manufacture of semiconductor laser. JP1987007185A. 1987-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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