Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask
文献类型:专利
| 作者 | KITAMURA, SHOTARO C/O NEC CORPORATION |
| 发表日期 | 1995-02-01 |
| 专利号 | EP0637111A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask |
| 英文摘要 | A semiconductor mesa structure (55) including active, absorbing, or passive guide layer (54) is surrounded laterally by insulating mask (52), and is buried by a cladding layer (56) which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance. In order to obtain a cladding layer having a flat top surface the mesa structure which is selectively grown on a (100)-substrate surface obliquely extends at least 5 degrees with respect to [011] direction C of the crystal structure. |
| 公开日期 | 1995-02-01 |
| 申请日期 | 1994-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89753] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KITAMURA, SHOTARO C/O NEC CORPORATION. Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask. EP0637111A1. 1995-02-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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