中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask

文献类型:专利

作者KITAMURA, SHOTARO C/O NEC CORPORATION
发表日期1995-02-01
专利号EP0637111A1
著作权人NEC CORPORATION
国家欧洲专利局
文献子类发明申请
其他题名Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask
英文摘要A semiconductor mesa structure (55) including active, absorbing, or passive guide layer (54) is surrounded laterally by insulating mask (52), and is buried by a cladding layer (56) which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance. In order to obtain a cladding layer having a flat top surface the mesa structure which is selectively grown on a (100)-substrate surface obliquely extends at least 5 degrees with respect to [011] direction C of the crystal structure.
公开日期1995-02-01
申请日期1994-07-27
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89753]  
专题半导体激光器专利数据库
作者单位NEC CORPORATION
推荐引用方式
GB/T 7714
KITAMURA, SHOTARO C/O NEC CORPORATION. Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask. EP0637111A1. 1995-02-01.

入库方式: OAI收割

来源:西安光学精密机械研究所

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