Photo semiconductor device
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; SUYAMA NAOHIRO; YAMAMOTO SABUROU |
| 发表日期 | 1986-01-17 |
| 专利号 | JP1986010293A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo semiconductor device |
| 英文摘要 | PURPOSE:To obtain the titled device having ideal guantum well optical waveguides with no fluctuation of interface caused by mixed crystals, by a method wherein a guantum well structure is made of only binary compounds into a structure without containing mixed crystals. CONSTITUTION:This semiconductor laser of guantum well structure has the successive growths of e.g. a superlattice clad layer 23 of the alternate laminations of N type GaAs and N type AlAs, a superlattice optical guide layer 24 of the alternate laminations of non-doped GaAs and non-doped AlAs, an active layer 25 of non-doped GaAs guantum well, a superlattice optical guide layer 26 of the alternate laminations of non-doped GaAs and non-doped AlAs, a superlattice clad layer 27 of the alternate laminations of P type GaAs and P type AlAs, and a P type GaAs cap layer further thereon. Such a structure enables light to be effectively guided with the active layer 25 as the center. Since the optical guide layers 24 and 26 that importantly influence the formation of quantizing level of the active layer 25 do not contain mixed crystals, an excellent guantum effect can be obtained with no fluctuation caused by mixed crystals. |
| 公开日期 | 1986-01-17 |
| 申请日期 | 1984-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89754]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,SUYAMA NAOHIRO,YAMAMOTO SABUROU. Photo semiconductor device. JP1986010293A. 1986-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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